Linear and nonlinear optical properties of InxGa1-xN/GaN heterostructures
Identifieur interne : 012268 ( Main/Repository ); précédent : 012267; suivant : 012269Linear and nonlinear optical properties of InxGa1-xN/GaN heterostructures
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Abstract
We have systematically studied both the spontaneous and stimulated emission properties in blue-light-emitting InxGa1-xN/GaN multiple quantum well structures using various linear and nonlinear optical techniques. Our experimental observations are consistently understandable in the context of localization of carriers associated with large potential fluctuations in the InxGa1-xN active regions and at heterointerfaces. The studies have been done as a function of excitation power density, excitation photon energy, excitation length, and temperature. The results show carrier localization features for spontaneous emission and demonstrate the presence of potential fluctuations in the InxGa1-xN active region of the InxGa1-xN/GaN structures and its predominant role in spontaneous emission. In addition, the experimental observations strongly indicate that the stimulated emission has the same microscopic origin as spontaneous emission, i.e., radiative recombination of localized states. Therefore, we conclude that carriers localized at potential fluctuations in InxGa1-xN active layers and interfaces can play a key role in not only spontaneous but also stimulated emission of state-of-the-art blue-light-emitting InxGa1-xN/GaN quantum structures.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Linear and nonlinear optical properties of In<sub>x</sub>Ga<sub>1-x</sub>N/GaN heterostructures</title><author><name sortKey="Cho, Yong Hoon" uniqKey="Cho Y">Yong-Hoon Cho</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Schmidt, T J" uniqKey="Schmidt T">T. J. Schmidt</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Bidnyk, S" uniqKey="Bidnyk S">S. Bidnyk</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Gainer, G H" uniqKey="Gainer G">G. H. Gainer</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Song, J J" uniqKey="Song J">J. J. Song</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Keller, S" uniqKey="Keller S">S. Keller</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara</wicri:cityArea></affiliation></author><author><name sortKey="Mishra, U K" uniqKey="Mishra U">U. K. Mishra</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara</wicri:cityArea></affiliation></author><author><name sortKey="Denbaars, S P" uniqKey="Denbaars S">S. P. Denbaars</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0113984</idno><date when="2000-03-15">2000-03-15</date><idno type="stanalyst">PASCAL 00-0113984 AIP</idno><idno type="RBID">Pascal:00-0113984</idno><idno type="wicri:Area/Main/Corpus">013953</idno><idno type="wicri:Area/Main/Repository">012268</idno></publicationStmt><seriesStmt><idno type="ISSN">0163-1829</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter</title><title level="j" type="main">Physical review. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Nonlinear optics</term><term>Semiconductor quantum wells</term><term>Semiconductor superlattices</term><term>Spontaneous emission</term><term>Stimulated emission</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7845</term><term>7855C</term><term>7866F</term><term>7847</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Puits quantique semiconducteur</term><term>Optique non linéaire</term><term>Superréseau semiconducteur</term><term>Emission spontanée</term><term>Emission stimulée</term><term>Etat interface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have systematically studied both the spontaneous and stimulated emission properties in blue-light-emitting In<sub>x</sub>Ga<sub>1-x</sub>N/GaN multiple quantum well structures using various linear and nonlinear optical techniques. Our experimental observations are consistently understandable in the context of localization of carriers associated with large potential fluctuations in the In<sub>x</sub>Ga<sub>1-x</sub>N active regions and at heterointerfaces. The studies have been done as a function of excitation power density, excitation photon energy, excitation length, and temperature. The results show carrier localization features for spontaneous emission and demonstrate the presence of potential fluctuations in the In<sub>x</sub>Ga<sub>1-x</sub>N active region of the In<sub>x</sub>Ga<sub>1-x</sub>N/GaN structures and its predominant role in spontaneous emission. In addition, the experimental observations strongly indicate that the stimulated emission has the same microscopic origin as spontaneous emission, i.e., radiative recombination of localized states. Therefore, we conclude that carriers localized at potential fluctuations in In<sub>x</sub>Ga<sub>1-x</sub>N active layers and interfaces can play a key role in not only spontaneous but also stimulated emission of state-of-the-art blue-light-emitting In<sub>x</sub>Ga<sub>1-x</sub>N/GaN quantum structures.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter</s0></fA03><fA05><s2>61</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Linear and nonlinear optical properties of In<sub>x</sub>Ga<sub>1-x</sub>N/GaN heterostructures</s1></fA08><fA11 i1="01" i2="1"><s1>CHO (Yong-Hoon)</s1></fA11><fA11 i1="02" i2="1"><s1>SCHMIDT (T. J.)</s1></fA11><fA11 i1="03" i2="1"><s1>BIDNYK (S.)</s1></fA11><fA11 i1="04" i2="1"><s1>GAINER (G. H.)</s1></fA11><fA11 i1="05" i2="1"><s1>SONG (J. J.)</s1></fA11><fA11 i1="06" i2="1"><s1>KELLER (S.)</s1></fA11><fA11 i1="07" i2="1"><s1>MISHRA (U. K.)</s1></fA11><fA11 i1="08" i2="1"><s1>DENBAARS (S. P.)</s1></fA11><fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA20><s1>7571-7588</s1></fA20><fA21><s1>2000-03-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0113984</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have systematically studied both the spontaneous and stimulated emission properties in blue-light-emitting In<sub>x</sub>Ga<sub>1-x</sub>N/GaN multiple quantum well structures using various linear and nonlinear optical techniques. Our experimental observations are consistently understandable in the context of localization of carriers associated with large potential fluctuations in the In<sub>x</sub>Ga<sub>1-x</sub>N active regions and at heterointerfaces. The studies have been done as a function of excitation power density, excitation photon energy, excitation length, and temperature. The results show carrier localization features for spontaneous emission and demonstrate the presence of potential fluctuations in the In<sub>x</sub>Ga<sub>1-x</sub>N active region of the In<sub>x</sub>Ga<sub>1-x</sub>N/GaN structures and its predominant role in spontaneous emission. In addition, the experimental observations strongly indicate that the stimulated emission has the same microscopic origin as spontaneous emission, i.e., radiative recombination of localized states. Therefore, we conclude that carriers localized at potential fluctuations in In<sub>x</sub>Ga<sub>1-x</sub>N active layers and interfaces can play a key role in not only spontaneous but also stimulated emission of state-of-the-art blue-light-emitting In<sub>x</sub>Ga<sub>1-x</sub>N/GaN quantum structures.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H45</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H47</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7845</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7847</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Optique non linéaire</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Nonlinear optics</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Superréseau semiconducteur</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor superlattices</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Emission spontanée</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Spontaneous emission</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Emission stimulée</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Stimulated emission</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Etat interface</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Interface states</s0></fC03><fN21><s1>080</s1></fN21><fN47 i1="01" i2="1"><s0>0011M000666</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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